Abstract: This article demonstrated the design and fabrication of a transmitter and receiver (TR) microsystem in Ka-band based on silicon 3-D heterogeneous-integration (3D-HI). To achieve this ...
Abstract: Low noise amplifier is a key component of RF receiver front-end. An amplitude limiting low noise amplifier (LNA) based on 0.09 μm GaAs pseudomorphic high electron mobility transistor (pHEMT) ...
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